h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 4 d e s c r i p t i o n t h e s s d4 08 uses advanced trench technology to provide f e a t u r e s * simple drive requirement * lower on-resistance * fast switching characteristic excellent on-resistance and low gate charge. to-25 2 s d g e l ek tr on isch e b a u e lemen te s s d 408 18a, 30 v ,r ds(on) 18 m n -channel enhancement mode power mos.fet [ millimeter millimeter ref. min. max. ref. min. max. a 6.40 6.80 g 0.50 0.70 b 5.20 5.50 h 2.20 2.40 c 6.80 7.20 j 0.45 0.55 d 2.20 2.80 k 0 0.15 e 2.30 ref. l 0.90 1.50 f 0.70 0.90 m 5.40 5.80 s 0.60 0.90 r 0.80 1.20 the to-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in pwm applications. rohs compliant product a b s o l u t e m a x i m u m r a t i n g s p a r a m e t e r s y m b o l r a t i n g s u n i t d r a i n - s o u r c e v o l t a g e v d s 3 0 v g a t e - s o u r c e v o l t a g e v g s 2 0 v c o n t i n u o u s d r a i n c u r r e n t , v g s @ 1 0 v i d @ t c = 2 5 : 1 8 a c o n t i n u o u s d r a i n c u r r e n t , v g s @ 1 0 v i d @ t c = 1 0 0 : 1 4 a p u l s e d d r a i n c u r r e n t 1 i d m 7 0 a t o t a l p o w e r d i s s i p a t i o n p d @ t c = 2 5 : 6 0 w l i n e a r d e r a t i n g f a c t o r 0 . 4 w / : s i n g l e p u l s e a v a l a n c h e e n e r g y 2 e a s 6 0 m j s i n g l e p u l s e a v a l a n c h e c u r r e n t i a s 3 5 a o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e t j , t s t g - 5 5 ~ + 1 7 5 : t h e r m a l d a t a p a r a m e t e r s y m b o l v a l u e u n i t t h e r m a l r e s i s t a n c e j u n c t i o n - c a s e m a x . r t h j - c 2 . 5 : / w t h e r m a l r e s i s t a n c e j u n c t i o n - a m b i e n t m a x . r t h j - a 5 0 / : w
h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l 01 -jun-2002 rev. a page 2 of 4 elektronische bauelemente n-channel enhancement mode power mos.fet ssd 408 18a, 3 0v,r ds(on) 18 m [ s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) : e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 : : : : u n l e s s o t h e r w i s e s p e c i f i e d ) p a r a m e t e r s y m b o l m i n . t y p . m a x . u n i t t e s t c o n d i t i o n s d r a i n - s o u r c e b r e a k d o w n v o l t a g e b v d s s 3 0 - - v v g s = 0 , i d = 2 5 0 u a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) 1 . 0 - 2 . 5 v v d s = v g s , i d = 2 5 0 u a f o r w a r d t r a n s c o n d u c t a n c e g f s - 2 5 - s v d s = 5 v , i d = 1 8 a g a t e - s o u r c e l e a k a g e c u r r e n t i g s s - - 1 0 0 n a v g s = 2 0 v d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) : - - 1 u a v d s = 3 0 v , v g s = 0 d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 5 5 ) : i d s s - - 5 u a v d s = 2 4 v , v g s = 0 - - 1 8 v g s = 1 0 v , i d = 1 8 a s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e 3 r d s ( o n ) - - 2 7 m v g s = 4 . 5 v , i d = 1 0 a t o t a l g a t e c h a r g e 3 q g - 1 9 . 8 2 5 g a t e - s o u r c e c h a r g e q g s - 2 . 5 - g a t e - d r a i n ( m i l l e r ) c h a n g e q g d - 3 . 5 - n c i d = 1 8 a v d s = 1 5 v v g s = 1 0 v t u r n - o n d e l a y t i m e 3 t d ( o n ) - 4 . 5 - r i s e t i m e t r - 3 . 9 - t u r n - o f f d e l a y t i m e t d ( o f f ) - 1 7 . 4 - f a l l t i m e t f - 3 . 2 - n s v d s = 1 5 v v g s = 1 0 v r g = 3 r l = 0 . 8 2 i n p u t c a p a c i t a n c e c i s s - 1 0 4 0 1 2 5 0 o u t p u t c a p a c i t a n c e c o s s - 1 8 0 - r e v e r s e t r a n s f e r c a p a c i t a n c e c r s s - 1 1 0 - p f v g s = 0 v v d s = 1 5 v f = 1 . 0 m h z s o u r c e - d r a i n d i o d e p a r a m e t e r s y m b o l m i n . t y p . m a x . u n i t t e s t c o n d i t i o n s f o r w a r d o n v o l t a g e 3 v s d - - 1 . 0 v i s = 1 a , v g s = 0 v c o n t i n u o u s s o u r c e c u r r e n t ( b o d y d i o d e ) i s - - 1 8 a r e v e r s e r e c o v e r y t i m e 3 t r r - 1 9 - n s r e v e r s e r e c o v e r y c h a r g e q r r - 8 - n c i s = 1 8 a , v g s = 0 v d i / d t = 1 0 0 a / s n o t e s : 1 . p u l s e w i d t h l i m i t e d b y s a f e o p e r a t i n g a r e a . 2 . s t a r i n g t j = 2 5 , v : d d = 2 5 v , l = 0 . 1 m h , r g = 2 5 . 3 . p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % .
3 of 5 -jun-2002 rev. a page 3 of 4 01 http://www.secosgmbh.com/ any changing of specification will not be informed individual elektronische bauelemente n-channel enhancement mode power mos.fet characteristics curve fig 5. maximum drain current v.s. case temperature f i g 1 . t y p i c a l o u t p u t c h a r a c t e r i s t i c s fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage f i g 4 . n o r m a l i z e d o n - r e s i s t a n c e v . s . j u n c t i o n t e m p e r a t u r e f i g 6 . t y p e p o w e r d i s s i p a t i o n s s d 4 08 18a, 3 0v,r ds(on) 18 m [ 0.00001 0.0001 0.001 0.01 0.1 10 1 0 1 0 . 0 0 . 0 0 . 0 . 1 1 0
-jun-2002 rev. a page 4 of 4 01 http://www.secosgmbh.com/ any changing of specification will not be informed individual elektronische bauelemente f i g 7 . m a x i m u m s a f e o p e r a t i n g a r e a f i g 8 . e f f e c t i v e t r a n s i e n t t h e r m a l i m p e d a n c e f i g 9 . g a t e c h a r g e c h a r a c t e r i s t i c s f i g 1 0 . t y p i c a l c a p a c i t a n c e c h a r a c t e r i s t i c s n-channel enhancement mode power mos.fet ssd 4 08 18a, 3 0v,r ds(on) 18 m [ f i g 1 1 . n o r m a l i z e d m a x i m u m t r a n s i e n t t h e r m a l i m p e d a n c e 0 . 0 0 0 1 0 . 0 0 1 0 . 1 1 1 0 1 0 0 0 0 . 0 0 0 01 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 1 0 0 1 0 0 0
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